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Article Dans Une Revue Applied Physics Letters Année : 2009

Grazing incidence small angle x-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition

Résumé

This paper focuses on the structure of nanoporous SiOCH thin films deposited using a porogen approach by plasma enhanced chemical vapor deposition (PECVD). The grazing incidence small angle x-ray scattering signal demonstrates the existence of a biphase pattern in hybrid films, deposited by PECVD. After porogen removal, there are few differences between pore pattern of optimized ultraviolet (UV) illuminated and thermally treated samples: anisotropy of the pore pattern is observed in both samples, probably due to the porogen degradation. Finally, a kinetic study of porogen degradation by UV shows that the porous structure develops in only a few minutes.
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Dates et versions

hal-00428622 , version 1 (29-10-2009)

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V. Jousseaume, O. Gourhant, A. Zenasni, M. Maret, J. P. Simon. Grazing incidence small angle x-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition. Applied Physics Letters, 2009, 95 (2), pp.ISI:000268089200064. ⟨10.1063/1.3168521⟩. ⟨hal-00428622⟩
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