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Article Dans Une Revue Photonics and Nanostructures - Fundamentals and Applications Année : 2007

InGaN green light emitting diodes with deposited nanoparticles

Résumé

We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, inwhich we expected an enhancement of the radiated intensity by the simulations and emission measurements. The obtained results showed the feasibility of plasmon-assisted LED emission enhancement.
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hal-00426574 , version 1 (26-10-2009)

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  • HAL Id : hal-00426574 , version 1

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B. Butun, Jean Cesario, Stefan Enoch, Romain Quidant, E. Ozbay. InGaN green light emitting diodes with deposited nanoparticles. Photonics and Nanostructures - Fundamentals and Applications, 2007, 5, pp.86-90. ⟨hal-00426574⟩
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