Investigation of Defects in 4H-SiC by Synchrotron Topography, Raman spectroscopy Imaging and Photoluminescence Spectroscopy Imaging
Résumé
Reflection synchrotron topography, integrated photoluminescence imaging and Raman spectroscopy imaging have been performed on a 4H-SiC slice. The three methods give complementary information on the defects in the crystal. The differences between the observations are discussed.