Structural Properties of Tensile-Strained Si Layers Grown on Si<sub>1-x</sub>Ge<sub>x</sub> Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5) - Archive ouverte HAL
Article Dans Une Revue ECS Transactions Année : 2007

Structural Properties of Tensile-Strained Si Layers Grown on Si1-xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5)

Résumé

We have studied the structural properties of tensile-strained Si (sSi) layers grown on polished Si0.8Ge0.2 and Si0.7Ge0.3 virtual substrates as a function of their thickness. The surface morphology, the tensile-strain, the linear density of defects and the threading dislocation density have been quantified for different sSi layer thickness. Results are compared to those previously obtained on sSi layers grown on top of polished Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates (ECS Trans. 3, No. 7, 319 (2006))

Domaines

Matériaux
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Dates et versions

hal-00417525 , version 1 (16-09-2009)

Identifiants

Citer

Jean-Michel Hartmann, Denis Rouchon, Michel Mermoux, Thierry Billon. Structural Properties of Tensile-Strained Si Layers Grown on Si1-xGex Virtual Substrates (x = 0.2, 0.3, 0.4 and 0.5). ECS Transactions, 2007, 6 (4), pp. 251-255. ⟨10.1149/1.2728868⟩. ⟨hal-00417525⟩
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