MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications - Archive ouverte HAL Access content directly
Conference Papers Year : 2009
No file

Dates and versions

hal-00415609 , version 1 (10-09-2009)

Identifiers

  • HAL Id : hal-00415609 , version 1

Cite

T. Moudakir, S. Gautier, G. Orsal, N. Maloufi, D. J. Rogers, et al.. MOVPE growth of InGaN on ZnO-buffered Si(111) substrates for solar cells applications. EW-MOVPE XIII Conference, Jun 2009, Ulm, Germany. pp.249. ⟨hal-00415609⟩
100 View
0 Download

Share

Gmail Facebook X LinkedIn More