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Article Dans Une Revue Thin Solid Films Année : 2009

Microstructural study of SnO2 thin layers deposited on sapphire by sol gel dip coating

Résumé

Tin oxide (SnO2) films have been grown onto (006) sapphire substrates by sol–gel dip-coating using tin alkoxide solutions. It is shown, using grazing-incidence X-ray diffraction, reciprocal space mapping and atomic force microscopy, that thermal annealing at 500 °C induces the crystallization of SnO2 in the rutiletype phase. Further annealing treatments at temperatures lower than 1100 °C give rise to slow grain growth controlled by surface diffusion, whereas rapid grain growth (controlled by an evaporation–condensation mechanism) takes place at temperatures higher than 1100 °C. Concomitantly, the film splits into isolated islands and a fibre texture occurs at higher temperatures.

Dates et versions

hal-00414140 , version 1 (08-09-2009)

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Citer

Wael Hamd, Y.C. Wu, Alexandre Boulle, Elsa Thune, René Guinebretière. Microstructural study of SnO2 thin layers deposited on sapphire by sol gel dip coating. Thin Solid Films, 2009, 518, pp.1-5. ⟨10.1016/j.tsf.2009.05.053⟩. ⟨hal-00414140⟩
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