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Communication Dans Un Congrès Année : 2003

A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge

Résumé

This paper describes a method to extract internal temperature and drain current values of a MOS transistor by proceeding to voltages acquisitions only. Two current and temperature dependant voltages are measured: the drain-to-source voltage when the MOSFET is in the linear state, and the body diode forward voltage drop when freewheeling. Analytical expression are proposed to estimate temperature and current values from the voltages measurements. The method is then implemented in a microcontroller to achieve a low cost monitoring system. Accuracy of the system is verified, and confidence maps over the full working range of the devices are given. An application to chip-to-ambient thermal impedance measurement using the estimator and a calorimeter is proposed.

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Autre
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Dates et versions

hal-00413309 , version 1 (03-09-2009)

Identifiants

  • HAL Id : hal-00413309 , version 1

Citer

Cyril Buttay, Dominique Bergogne, Hervé Morel, Bruno Allard, René Ehlinger, et al.. A Voltage-Measurement Based Estimator for Current and Temperature in MOSFET H-Bridge. EPE, Sep 2003, Toulouse, France. pp.1-10. ⟨hal-00413309⟩
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