Trapped mobile charges effects on electro-optical performances in silicon phototransistors for space applications - Archive ouverte HAL
Communication Dans Un Congrès Année : 2009

Trapped mobile charges effects on electro-optical performances in silicon phototransistors for space applications

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Electronique
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Dates et versions

hal-00403233 , version 1 (09-07-2009)

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  • HAL Id : hal-00403233 , version 1

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Piero Spezzigu, Gianandrea Quadri, Olivier Gilard, Laurent Bechou, Yves Ousten, et al.. Trapped mobile charges effects on electro-optical performances in silicon phototransistors for space applications. ISROS, May 2009, Cagliari, Italy. p285. ⟨hal-00403233⟩
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