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Communication Dans Un Congrès Année : 2007

23 GHz fully integrated CMOS synthesizer

Résumé

A fully integrated 23 GHz CMOS PLL-based synthesizer is presented. This circuit combines push-push oscillator with a latch based divider to achieve low-power dissipation and a small die. The circuit was designed in 130 nm bulk CMOS process from STMicroelectronics. The synthesized range is from 22 GHz up to 24.2 GHz, the power dissipation is 58 mW under 1.0 V power supply. The measured phase noise is better than -95 dBc/Hz at 1 MHz of the carrier with a 575 MHz reference frequency.

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Domaines

Electronique
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Dates et versions

hal-00401552 , version 1 (03-07-2009)

Identifiants

  • HAL Id : hal-00401552 , version 1

Citer

Olivier Mazouffre, Yann Deval, Birama Goumballa, Didier Belot, Jean-Baptiste Begueret. 23 GHz fully integrated CMOS synthesizer. Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on, Nov 2007, Beijing, France. ⟨hal-00401552⟩
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