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Communication Dans Un Congrès Année : 2009

A SiGe:C BiCMOS LNA for 60GHz band applications

Résumé

A new differential LNA dedicated to 60GHz band has been implemented in a 130nm BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on the circuit implementation which is a critical design step in mm-Waves range, this work proposes a systematic modeling of layout parasitic elements leading to almost perfectly fit measurement and simulation results. The two stage cascode LNA achieves a 21.14dB maximum peak of power gain at 61.5GHz. Measured 1dB compression point is -21.2dBm, whereas the minimum simulated noise figure is 4.3dB at 60GHz. Power consumption is 10.2mW for the circuit core. This building block is also presented as a specific example of a complete design flow for mm-Waves applications.

Domaines

Electronique
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Dates et versions

hal-00401260 , version 1 (02-07-2009)

Identifiants

  • HAL Id : hal-00401260 , version 1

Citer

Rafaelle Severino, Thierry Taris, Yann Deval, Didier Belot, Jean-Baptiste Begueret. A SiGe:C BiCMOS LNA for 60GHz band applications. IEEE Bipolar / BiCMOS Circuits and Technology Meeting (BCTM2009), Oct 2009, Capry, Italy. pp.56-60. ⟨hal-00401260⟩
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