XPS sidewalls analyses ofP-Si/TiN/HfO2 gate stack etched with Cl and F based chemistries - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2007

XPS sidewalls analyses ofP-Si/TiN/HfO2 gate stack etched with Cl and F based chemistries

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hal-00400647 , version 1 (01-07-2009)

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  • HAL Id : hal-00400647 , version 1

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O. Luere, E. Pargon, O. R. Joubert, T. Lill. XPS sidewalls analyses ofP-Si/TiN/HfO2 gate stack etched with Cl and F based chemistries. 54th International AVS Symposium & Topical Conferences, 2007, seattle, United States. ⟨hal-00400647⟩
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