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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2009

Implementation of tunneling phenomena in a CNTFET compact model

Résumé

This paper presents the implementation of band-to-band tunneling (BTBT) mechanisms into the compact model of a conventional CNTFET featuring a MOSFET-like operation. Appropriate equations enable the calculation of the BTBT current as well as the charge pile up in the channel. To ensure the model accuracy and validate the equation set, the compact model simulation results are methodically compared with non-equilibrium Green Function ones. Afterwards, the investigations on the BTBT effects with respect to the figures of merits of transistor and circuit have led to draw the conclusion that their impact is of utmost importance for large signal analog and digital circuit designs. When neglecting the BTBT phenomena leads to an overestimation of more than 50% of the gate inverter delay and to an underestimation of power consumption of 30%. Finally, tradeoff recommendations between chirality and operating bias voltage are presented.
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Dates et versions

hal-00399797 , version 1 (29-06-2009)

Identifiants

  • HAL Id : hal-00399797 , version 1

Citer

Sebastien Fregonese, Cristell Maneux, T. Zimmer. Implementation of tunneling phenomena in a CNTFET compact model. IEEE Transactions on Electron Devices, 2009, 56 (10), pp.2224-2231. ⟨hal-00399797⟩
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