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Article Dans Une Revue Advanced Functional Materials Année : 2009

Electric field Assisted Nanostucturing of a Mott Insulator

Résumé

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly “read” by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator.
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Dates et versions

hal-00399238 , version 1 (25-06-2009)

Identifiants

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Vincent Dubost, Tristan Cren, C. Vaju, Laurent Cario, Benoît Corraze, et al.. Electric field Assisted Nanostucturing of a Mott Insulator. Advanced Functional Materials, 2009, 19, pp.2800. ⟨10.1002/adfm.200900208⟩. ⟨hal-00399238⟩
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