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Conference Papers Year : 2007

Evaluation of Recent Technologies of Non-Volatile RAM

Abstract

Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
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Dates and versions

hal-00397841 , version 1 (23-06-2009)

Identifiers

  • HAL Id : hal-00397841 , version 1

Cite

T. Nuns, S. Duzellier, J. Bertrand, G. Hubert, Vincent Pouget, et al.. Evaluation of Recent Technologies of Non-Volatile RAM. 9th European Conference on Radiation and its Effects on Components and Systems (RADECS), Sep 2007, Deauville, France. pp.1-8. ⟨hal-00397841⟩
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