Communication Dans Un Congrès Année : 2008

Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride.

Fichier non déposé

Dates et versions

hal-00392127 , version 1 (05-06-2009)

Identifiants

  • HAL Id : hal-00392127 , version 1

Citer

Mame Andallah Diop, N. Revil, M. Marin, F. Monsieur, P. Chevalier, et al.. Impact of Inside Spacer Process on Fully Self-Aligned 250 GHz SiGe:C HBTs Reliability Performances: a - Si vs. Nitride.. ESREF 2008, Maastricht, The Netherlands, Sep 2008, -, Netherlands. ⟨hal-00392127⟩
80 Consultations
0 Téléchargements

Partager

  • More