Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses - Archive ouverte HAL
Article Dans Une Revue Materials Science Forum Année : 2009

Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses

Christophe Raynaud
Duy Minh Nguyen
  • Fonction : Auteur
Pierre Brosselard
Dominique Planson

Résumé

Schottky barrier diodes and junction barrier Schottky diodes are investigated by thermal admittance spectroscopy, and by Capacitance-Voltage measurements. Samples are protected with surrounding junction termination extension and p+ ring. Temperature dependence of the doping level is first calculated. Then admittance spectra allow detecting defects and extracting their activation energies and capture cross sections. Results seem to indicate the presence of interfacial defects and defects due to the implantation process.
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Dates et versions

hal-00391462 , version 1 (04-06-2009)

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Christophe Raynaud, Duy Minh Nguyen, Pierre Brosselard, Amador Pérez-Tomás, Dominique Planson, et al.. Characterization of 4H-SiC Junction Barrier Schottky Diodes by Admittance vs Temperature Analyses. Materials Science Forum, 2009, 615-617, pp.671-674. ⟨10.4028/www.scientific.net/MSF.615-617.671⟩. ⟨hal-00391462⟩
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