Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2009

Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique

Résumé

The SiC bipolar rectifier is a good alternative compared to the SiC Junction Barrier Schottky diode for applications requiring very high current capability for breakdown voltage higher than 3 kV. This paper reports on the influence of temperature on the electrical carrier lifetime of 3.3 kV 4H-SiC PiN diodes processed with a new generation of SiC material.
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Dates et versions

hal-00391369 , version 1 (03-06-2009)

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Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Hassan Jawad, Pascal Bevilacqua, et al.. Temperature Dependence lifetime measurements on 3.3kV 4H-SiC PiN Diodes using OCVD Technique. ECSCRM European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.703-706, ⟨10.4028/www.scientific.net/MSF.615-617.703⟩. ⟨hal-00391369⟩
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