8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well? - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?

Teddy Robert
  • Function : Author
  • PersonId : 860822
Sandrine Juillaguet
  • Function : Author
  • PersonId : 839245
M. Marinova
  • Function : Author
T. Chassagne
  • Function : Author
I. Tsiaoussis
  • Function : Author
N. Frangis
  • Function : Author
E. K. Polychroniadis
  • Function : Author
Jean Camassel
  • Function : Author
  • PersonId : 839246

Abstract

The electronic structure of in-grown 8H stacking faults in 4H-SiC matrix has been investigated in detail. After assessment of the structural properties by high resolution transmission electron microscopy, we focus on the electronic structure. We show that one unit cell of 8H does not behave like a single type-II quantum well but, rather, like two type-II quantum wells of 3C coupled by a thin hexagonal barrier. Using a transfer matrix method. we Compute the corresponding transition energies, taking into account the effect of the valence band offset and built-in electric field. A good agreement is found with the experimental data collected from low temperature photoluminescence spectroscopy.
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Dates and versions

hal-00390453 , version 1 (02-06-2009)

Identifiers

  • HAL Id : hal-00390453 , version 1

Cite

Teddy Robert, Sandrine Juillaguet, M. Marinova, T. Chassagne, I. Tsiaoussis, et al.. 8H Stacking Faults in a 4H-SiC matrix: Simple Unit Cell or Double 3C Quantum Well?. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.339-342. ⟨hal-00390453⟩
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