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Conference Papers Year : 2009

InN excitonic deformation potentials determined experimentally

Bernard Gil
  • Function : Author
  • PersonId : 860805
Olivier Briot
Matthieu Moret
Sandra Ruffenach
  • Function : Author
  • PersonId : 860798
Christoph Giesen
  • Function : Author
  • PersonId : 860806
Michael Heuken
  • Function : Author
  • PersonId : 860807
Simon Rushworth
  • Function : Author
T. Leese
  • Function : Author
Marco Succi
  • Function : Author

Abstract

We report the experimental determination of the interband deformation potentials of indium nitride by combining both optical spectroscopy investigations and high-resolution X-ray measurements performed on a series of InN films grown by metal organic vapour-phase epitaxy. Our approach, which follows the one used for GaN by Shan et al. [Phys. Rev. B. 54 (1996) 13460], gives here for InN a1=-7.66 eV, a2=-2.59 eV, b1=5.06 eV, and b2=-2.53 eV.

Dates and versions

hal-00390295 , version 1 (01-06-2009)

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Bernard Gil, Olivier Briot, Matthieu Moret, Sandra Ruffenach, Christoph Giesen, et al.. InN excitonic deformation potentials determined experimentally. 2nd International Symposium on Growth of III-Nitrides (ISGN-2), Jul 2008, Laforet Shuzenji, Izu, Japan. pp.2798, ⟨10.1016/j.jcrysgro.2009.01.010⟩. ⟨hal-00390295⟩
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