Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls” - Archive ouverte HAL Access content directly
Conference Papers Year : 2004

Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls”

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hal-00389899 , version 1 (30-05-2009)

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  • HAL Id : hal-00389899 , version 1

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Thierry Chassagne, André Leycuras, Carole Balloud, Philippe Arcade, Hervé Peyre, et al.. Investigation of 2 inch SiC layers grown in a resistively-heated LP-CVD reactor with horizontal “hot-walls”. 10th International Conference on Silicon Carbide and Related Materials (ICSCRM2003), Oct 2003, Lyon, France. pp.273-276. ⟨hal-00389899⟩
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