Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC - Archive ouverte HAL Access content directly
Conference Papers Year : 2009

Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC

M. Zielinski
  • Function : Author
M. Portail
T. Chassagne
  • Function : Author
Sandrine Juillaguet
  • Function : Author
  • PersonId : 839245
Herve Peyre
  • Function : Author
  • PersonId : 860717
A. Leycuras
  • Function : Author
Jean Camassel
  • Function : Author
  • PersonId : 839246

Abstract

We report on recent advances in liquid phase epitaxial (LPE) conversion of a bulk Si wafer into self standing 3C-SiC. This includes the role of the stress control within the (100) oriented "crucibles", the elaboration of crack-free (111) "crucibles" and the successful conversion of (100) and (111) oriented Si wafer. To date up to 100 mu m thick 3C-SiC(100) as well as 30 mu m thick crack-free 3C-SiC (111) materials have been obtained. The growth rate ranges from 20 to 100 mu m/h and locally can even reach similar to 1mm/h. In this work we focus on the structural, morphological and optical properties of the LPE-grown material.
No file

Dates and versions

hal-00389376 , version 1 (28-05-2009)

Identifiers

  • HAL Id : hal-00389376 , version 1

Cite

M. Zielinski, M. Portail, T. Chassagne, Sandrine Juillaguet, Herve Peyre, et al.. Advances in Liquid Phase Conversion of (100) and (111) Oriented Si Wafers into Self-standing 3C-SiC. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelona (SPAIN), Spain. pp.49-52. ⟨hal-00389376⟩
41 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More