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Communication Dans Un Congrès Année : 2009

Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase

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The conditions to succeed in growing 3C-SiC single crystals are first, make available large 3C-SiC seeds and second, develop a suitable growth process. In this paper, we will address those two issues by reviewing the most recent results in the field. Nucleation, growth, structural quality and doping results will be presented. New insights on 3C bulk growth will be discussed with respect to a future development of real bulk 3C-SiC ingots.
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hal-00389062 , version 1 (16-09-2022)

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Didier Chaussende, Jessica Eid, Frédéric Mercier, Roland Madar, Michel Pons. Nucleation and Growth of 3C-SiC Single Crystals from the Vapor Phase. 7th European Conference on Silicon Carbide and Related Materials, Sep 2008, Barcelone, Spain. pp.31-36, ⟨10.4028/www.scientific.net/MSF.615-617.31⟩. ⟨hal-00389062⟩
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