Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization - Archive ouverte HAL
Communication Dans Un Congrès Année : 2008

Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization

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Matériaux Génie des procédés

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https://hal.science/hal-00386164

Soumis le : mercredi 20 mai 2009-17:01:03

Dernière modification le : jeudi 11 avril 2024-13:08:13

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hal-00386164 , version 1 (20-05-2009)

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  • HAL Id : hal-00386164 , version 1

Citer

M. Vilmay, Daniel Roy, F. Volpi, J.M. Chaix. Characterization of low-k SiOCH dielectric for 45nm technology and link between the dominant leakage path and the breakdown localization. Materials for Advanced Metallization Conference (MAM 2008), 2008, Dresden, Germany. pp.2075-2078. ⟨hal-00386164⟩

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