<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-00384232</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-23T05:08:36+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">Study of 193-nm resist degradation under various etch chemistries</title>
            <author role="aut">
              <persName>
                <forename type="first">Arnaud</forename>
                <surname>Bazin</surname>
              </persName>
              <idno type="halauthorid">392804-0</idno>
              <affiliation ref="#struct-23639"/>
              <affiliation ref="#struct-441569"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Michael</forename>
                <surname>May</surname>
              </persName>
              <idno type="halauthorid">196403-0</idno>
              <affiliation ref="#struct-23639"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Erwine</forename>
                <surname>Pargon</surname>
              </persName>
              <email type="md5">0f1ab8bf50ce104e71b5101d75235ed3</email>
              <email type="domain">cea.fr</email>
              <idno type="idhal" notation="string">erwine-pargon</idno>
              <idno type="idhal" notation="numeric">180469</idno>
              <idno type="halauthorid" notation="string">14862-180469</idno>
              <idno type="ORCID">https://orcid.org/0000-0002-6337-9180</idno>
              <affiliation ref="#struct-441569"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Bénédicte</forename>
                <surname>Mortini</surname>
              </persName>
              <idno type="halauthorid">198749-0</idno>
              <affiliation ref="#struct-23639"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Olivier</forename>
                <surname>Joubert</surname>
              </persName>
              <idno type="halauthorid">668729-0</idno>
              <affiliation ref="#struct-441569"/>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Marielle</forename>
                <surname>Clot</surname>
              </persName>
              <email type="md5">0b34f9a3638603b13afd163215bd2ff1</email>
              <email type="domain">cea.fr</email>
            </editor>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2023-03-16 14:07:33</date>
              <date type="whenModified">2023-03-24 14:53:31</date>
              <date type="whenReleased">2023-03-17 08:48:43</date>
              <date type="whenProduced">2007-02-25</date>
              <date type="whenEndEmbargoed">2023-03-16</date>
              <ref type="file" target="https://hal.science/hal-00384232v1/document">
                <date notBefore="2023-03-16"/>
              </ref>
              <ref type="file" subtype="author" n="1" target="https://hal.science/hal-00384232v1/file/bazin2007.pdf" id="file-4032297-3510803">
                <date notBefore="2023-03-16"/>
              </ref>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="128943">
                <persName>
                  <forename>Marielle</forename>
                  <surname>Clot</surname>
                </persName>
                <email type="md5">0b34f9a3638603b13afd163215bd2ff1</email>
                <email type="domain">cea.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-00384232</idno>
            <idno type="halUri">https://hal.science/hal-00384232</idno>
            <idno type="halBibtex">bazin:hal-00384232</idno>
            <idno type="halRefHtml">&lt;i&gt;Advances in Resist Materials and Processing Technology XXIV&lt;/i&gt;, Feb 2007, San Jose, United States. &lt;a target="_blank" href="https://dx.doi.org/10.1117/12.711415"&gt;&amp;#x27E8;10.1117/12.711415&amp;#x27E9;&lt;/a&gt;</idno>
            <idno type="halRef">Advances in Resist Materials and Processing Technology XXIV, Feb 2007, San Jose, United States. &amp;#x27E8;10.1117/12.711415&amp;#x27E9;</idno>
            <availability status="restricted">
              <licence target="https://creativecommons.org/licenses/by/4.0/">CC BY 4.0 - Attribution<ref corresp="#file-4032297-3510803"/></licence>
            </availability>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="FMNT">FMNT - Fédération Micro- et Nano- Technologies</idno>
            <idno type="stamp" n="LTM" corresp="FMNT">Laboratoire des technologies de la microélectronique</idno>
            <idno type="stamp" n="PLASMA_ETCHING" corresp="LTM">Plasma etching</idno>
            <idno type="stamp" n="TEST3-HALCNRS">TEST3-HALCNRS</idno>
          </seriesStmt>
          <notesStmt>
            <note type="commentary">SPIE ADVANCED LITHOGRAPHY</note>
            <note type="audience" n="2">International</note>
            <note type="invited" n="0">No</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
            <note type="proceedings" n="0">No</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">Study of 193-nm resist degradation under various etch chemistries</title>
                <author role="aut">
                  <persName>
                    <forename type="first">Arnaud</forename>
                    <surname>Bazin</surname>
                  </persName>
                  <idno type="halauthorid">392804-0</idno>
                  <affiliation ref="#struct-23639"/>
                  <affiliation ref="#struct-441569"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Michael</forename>
                    <surname>May</surname>
                  </persName>
                  <idno type="halauthorid">196403-0</idno>
                  <affiliation ref="#struct-23639"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Erwine</forename>
                    <surname>Pargon</surname>
                  </persName>
                  <email type="md5">0f1ab8bf50ce104e71b5101d75235ed3</email>
                  <email type="domain">cea.fr</email>
                  <idno type="idhal" notation="string">erwine-pargon</idno>
                  <idno type="idhal" notation="numeric">180469</idno>
                  <idno type="halauthorid" notation="string">14862-180469</idno>
                  <idno type="ORCID">https://orcid.org/0000-0002-6337-9180</idno>
                  <affiliation ref="#struct-441569"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Bénédicte</forename>
                    <surname>Mortini</surname>
                  </persName>
                  <idno type="halauthorid">198749-0</idno>
                  <affiliation ref="#struct-23639"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Olivier</forename>
                    <surname>Joubert</surname>
                  </persName>
                  <idno type="halauthorid">668729-0</idno>
                  <affiliation ref="#struct-441569"/>
                </author>
              </analytic>
              <monogr>
                <meeting>
                  <title>Advances in Resist Materials and Processing Technology XXIV</title>
                  <date type="start">2007-02-25</date>
                  <date type="end">2007-03-02</date>
                  <settlement>San Jose</settlement>
                  <country key="US">United States</country>
                </meeting>
                <imprint>
                  <publisher>SPIE</publisher>
                  <biblScope unit="serie">Proceedings volume Advances in Resist Materials and Processing Technology XXIV</biblScope>
                  <biblScope unit="issue">6519N</biblScope>
                  <date type="datePub">2007</date>
                </imprint>
              </monogr>
              <idno type="doi">10.1117/12.711415</idno>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <keywords scheme="author">
                <term xml:lang="en">DMA</term>
                <term xml:lang="en">XPS</term>
                <term xml:lang="en">FTIR</term>
                <term xml:lang="en">etch rate</term>
                <term xml:lang="en">etch chemistry</term>
                <term xml:lang="en">etch resistance</term>
                <term xml:lang="en">photoresists</term>
              </keywords>
              <classCode scheme="halDomain" n="phys">Physics [physics]</classCode>
              <classCode scheme="halTypology" n="COMM">Conference papers</classCode>
              <classCode scheme="halOldTypology" n="COMM">Conference papers</classCode>
              <classCode scheme="halTreeTypology" n="COMM">Conference papers</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>The effectivity of 193nm photoresists as dry etch masks is becoming more and more critical as the size of integrated devices shrinks. 193nm resists are known to be much less resistant to dry etching than 248nm resists based on a poly(hydroxystyrene) polymer backbone. The decrease in the resist film budget implies a better etch resistance to use single layer 193nm photoresists for the 65nm node and beyond. In spite of significant improvements made in the past decade regarding the etch resistance of photoresists, much of the fundamental chemistry and physics that could explain the behaviour of these materials has to be better understood. Such knowledge is necessary in order to propose materials and etch processes for the next technology nodes (45nm and below). In this paper, we report our studies on the etch behaviour of different 193nm resist materials as a function of etch chemistry. In a first step, we focus our attention on the interactions between photoresists and the reactive species of a plasma during a dry etch step. Etch experiments were carried out in a DPS (Decoupled Plasma Source) high density chamber. The gas chemistry in particular was changed to check the role of the plasma reactive species on the resist. O2, Cl2, CF4, HBr and Ar gas were used. Etch rates and chemical modifications of different materials were quantified by ellipsometry, Fourier Transformed Infrared Spectroscopy (FTIR), and X-Ray Photoelectrons Spectroscopy (XPS). We evaluated different materials including 248nm model polymer backbones (pure PHS or functionalized PHS), and 193nm model polymers (PMMA and acrylate polymers) or resist formulations. Besides the influence of resist chemistry, the impact of plasma parameters was addressed.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="institution" xml:id="struct-23639" status="VALID">
          <orgName>STMicroelectronics [Crolles]</orgName>
          <orgName type="acronym">ST-CROLLES</orgName>
          <desc>
            <address>
              <addrLine>850 rue Jean Monnet BP 16 38926 Crolles</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.st.com</ref>
          </desc>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>