Novel Structures of 3.3kV 4H-SiC BJTs to Reduce the Stacking Faults Expansion
Résumé
In this work, two different SiC BJT structures are proposed, which are based on fully epitaxied technology (except the JTE termination). The main different between the two proposed BJT structures is the overlapping of P+-layer on the N+-layer (structure O) and the etch of P+-layer to separate the emitter and the base (structure E). Structure E is similar to a standard implanted base BJT structure, but the P+-layer is done by epitaxy. This should reduce the damage created by the implantation and then partially eliminate one of the causes of current gain degradation observed in previous BJT devices.