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Communication Dans Un Congrès Année : 2008

Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters

Résumé

Sic is compared on a physical basis to Si. Sic devices offer lower On-resistance and operating temperatures over 300°C. It is shown that inverters using normally-On power switches do not differ from inverters based on normally-Off devices when the gate driver is taken into account. Basic building blocs of a Gate driver are proposed using solely SiC Normally-On JFETs. Principal issues with Sic JFET power converters are listed.

Domaines

Electronique
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Dates et versions

hal-00372982 , version 1 (03-04-2009)

Identifiants

  • HAL Id : hal-00372982 , version 1

Citer

Dominique Bergogne, Hervé Morel, Dominique Tournier, Bruno Allard, Dominique Planson, et al.. Normally-on devices and circuits, SiC and high temperature : using SiCJFETs in power converters. 5th CIPS, Mar 2008, Nuremberg, Germany. pp.08.2. ⟨hal-00372982⟩
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