Conference Papers
Year : 2007
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https://hal.science/hal-00367697
Submitted on : Thursday, March 12, 2009-10:39:37 AM
Last modification on : Friday, March 24, 2023-2:52:51 PM
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- HAL Id : hal-00367697 , version 1
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J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, et al.. Growth and characterization of AlInN/GaN field effect transistors. Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩
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