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Communication Dans Un Congrès Année : 2007

Electronic and transport properties of semiconductor nanowires : theory and simulation

Résumé

In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.
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Dates et versions

hal-00367403 , version 1 (11-03-2009)

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  • HAL Id : hal-00367403 , version 1

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Yann-Michel Niquet, Aurélien Lherbier, Martin P. Persson, François Triozon, Stéphane Roche, et al.. Electronic and transport properties of semiconductor nanowires : theory and simulation. International Conference on One-dimensional Nanomaterials, 2007, Malmö/Lund, Sweden. ⟨hal-00367403⟩
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