<?xml version="1.0" encoding="utf-8"?>
<TEI xmlns="http://www.tei-c.org/ns/1.0" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:hal="http://hal.archives-ouvertes.fr/" xmlns:gml="http://www.opengis.net/gml/3.3/" xmlns:gmlce="http://www.opengis.net/gml/3.3/ce" version="1.1" xsi:schemaLocation="http://www.tei-c.org/ns/1.0 http://api.archives-ouvertes.fr/documents/aofr-sword.xsd">
  <teiHeader>
    <fileDesc>
      <titleStmt>
        <title>HAL TEI export of hal-00365894</title>
      </titleStmt>
      <publicationStmt>
        <distributor>CCSD</distributor>
        <availability status="restricted">
          <licence target="https://creativecommons.org/publicdomain/zero/1.0/">CC0 1.0 - Universal</licence>
        </availability>
        <date when="2026-05-14T22:49:58+02:00"/>
      </publicationStmt>
      <sourceDesc>
        <p part="N">HAL API Platform</p>
      </sourceDesc>
    </fileDesc>
  </teiHeader>
  <text>
    <body>
      <listBibl>
        <biblFull>
          <titleStmt>
            <title xml:lang="en">The passivation layer formation in the cryo-etching plasma process</title>
            <author role="aut">
              <persName>
                <forename type="first">Remi</forename>
                <surname>Dussart</surname>
              </persName>
              <email type="md5">8e2e4b2273fca85f5da16cacf243ae13</email>
              <email type="domain">univ-orleans.fr</email>
              <idno type="idhal" notation="string">remi-dussart</idno>
              <idno type="idhal" notation="numeric">4419</idno>
              <idno type="halauthorid" notation="string">7670-4419</idno>
              <affiliation ref="#struct-955"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Xavier</forename>
                <surname>Mellhaoui</surname>
              </persName>
              <idno type="halauthorid">150185-0</idno>
              <affiliation ref="#struct-955"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Thomas</forename>
                <surname>Tillocher</surname>
              </persName>
              <email type="md5">94fcf5ac7a6aba737654a4259711ba18</email>
              <email type="domain">univ-orleans.fr</email>
              <idno type="idhal" notation="string">thomas-tillocher</idno>
              <idno type="idhal" notation="numeric">7479</idno>
              <idno type="halauthorid" notation="string">3015-7479</idno>
              <idno type="ORCID">https://orcid.org/0000-0002-9160-5595</idno>
              <idno type="IDREF">https://www.idref.fr/120339072</idno>
              <affiliation ref="#struct-955"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Philippe</forename>
                <surname>Lefaucheux</surname>
              </persName>
              <email type="md5">986977331ccf8193ea1fde7bfa62d638</email>
              <email type="domain">univ-orleans.fr</email>
              <idno type="idhal" notation="numeric">1248767</idno>
              <idno type="halauthorid" notation="string">167247-1248767</idno>
              <idno type="ORCID">https://orcid.org/0000-0001-7889-8891</idno>
              <affiliation ref="#struct-955"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Mohamed</forename>
                <surname>Boufnichel</surname>
              </persName>
              <idno type="halauthorid">167249-0</idno>
              <affiliation ref="#struct-23639"/>
            </author>
            <author role="aut">
              <persName>
                <forename type="first">Pierre</forename>
                <surname>Ranson</surname>
              </persName>
              <idno type="halauthorid">132925-0</idno>
              <affiliation ref="#struct-955"/>
            </author>
            <editor role="depositor">
              <persName>
                <forename>Remi</forename>
                <surname>Dussart</surname>
              </persName>
              <email type="md5">8e2e4b2273fca85f5da16cacf243ae13</email>
              <email type="domain">univ-orleans.fr</email>
            </editor>
          </titleStmt>
          <editionStmt>
            <edition n="v1" type="current">
              <date type="whenSubmitted">2009-03-04 19:34:55</date>
              <date type="whenModified">2025-02-19 10:57:26</date>
              <date type="whenReleased">2009-03-04 19:34:55</date>
              <date type="whenProduced">2007-01-27</date>
              <ref type="externalLink" target="https://api.istex.fr/ark:/67375/6H6-WMBX17JX-Z/fulltext.pdf?sid=hal"/>
            </edition>
            <respStmt>
              <resp>contributor</resp>
              <name key="133454">
                <persName>
                  <forename>Remi</forename>
                  <surname>Dussart</surname>
                </persName>
                <email type="md5">8e2e4b2273fca85f5da16cacf243ae13</email>
                <email type="domain">univ-orleans.fr</email>
              </name>
            </respStmt>
          </editionStmt>
          <publicationStmt>
            <distributor>CCSD</distributor>
            <idno type="halId">hal-00365894</idno>
            <idno type="halUri">https://hal.science/hal-00365894</idno>
            <idno type="halBibtex">dussart:hal-00365894</idno>
            <idno type="halRefHtml">&lt;i&gt;Microelectronic Engineering&lt;/i&gt;, 2007, 84, pp.1128. &lt;a target="_blank" href="https://dx.doi.org/10.1016/j.mee.2007.01.048"&gt;&amp;#x27E8;10.1016/j.mee.2007.01.048&amp;#x27E9;&lt;/a&gt;</idno>
            <idno type="halRef">Microelectronic Engineering, 2007, 84, pp.1128. &amp;#x27E8;10.1016/j.mee.2007.01.048&amp;#x27E9;</idno>
            <availability status="restricted"/>
          </publicationStmt>
          <seriesStmt>
            <idno type="stamp" n="CNRS">CNRS - Centre national de la recherche scientifique</idno>
            <idno type="stamp" n="UNIV-ORLEANS">Université d'Orléans</idno>
            <idno type="stamp" n="GREMI" corresp="UNIV-ORLEANS">Publications du GREMI</idno>
          </seriesStmt>
          <notesStmt>
            <note type="audience" n="2">International</note>
            <note type="popular" n="0">No</note>
            <note type="peer" n="1">Yes</note>
          </notesStmt>
          <sourceDesc>
            <biblStruct>
              <analytic>
                <title xml:lang="en">The passivation layer formation in the cryo-etching plasma process</title>
                <author role="aut">
                  <persName>
                    <forename type="first">Remi</forename>
                    <surname>Dussart</surname>
                  </persName>
                  <email type="md5">8e2e4b2273fca85f5da16cacf243ae13</email>
                  <email type="domain">univ-orleans.fr</email>
                  <idno type="idhal" notation="string">remi-dussart</idno>
                  <idno type="idhal" notation="numeric">4419</idno>
                  <idno type="halauthorid" notation="string">7670-4419</idno>
                  <affiliation ref="#struct-955"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Xavier</forename>
                    <surname>Mellhaoui</surname>
                  </persName>
                  <idno type="halauthorid">150185-0</idno>
                  <affiliation ref="#struct-955"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Thomas</forename>
                    <surname>Tillocher</surname>
                  </persName>
                  <email type="md5">94fcf5ac7a6aba737654a4259711ba18</email>
                  <email type="domain">univ-orleans.fr</email>
                  <idno type="idhal" notation="string">thomas-tillocher</idno>
                  <idno type="idhal" notation="numeric">7479</idno>
                  <idno type="halauthorid" notation="string">3015-7479</idno>
                  <idno type="ORCID">https://orcid.org/0000-0002-9160-5595</idno>
                  <idno type="IDREF">https://www.idref.fr/120339072</idno>
                  <affiliation ref="#struct-955"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Philippe</forename>
                    <surname>Lefaucheux</surname>
                  </persName>
                  <email type="md5">986977331ccf8193ea1fde7bfa62d638</email>
                  <email type="domain">univ-orleans.fr</email>
                  <idno type="idhal" notation="numeric">1248767</idno>
                  <idno type="halauthorid" notation="string">167247-1248767</idno>
                  <idno type="ORCID">https://orcid.org/0000-0001-7889-8891</idno>
                  <affiliation ref="#struct-955"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Mohamed</forename>
                    <surname>Boufnichel</surname>
                  </persName>
                  <idno type="halauthorid">167249-0</idno>
                  <affiliation ref="#struct-23639"/>
                </author>
                <author role="aut">
                  <persName>
                    <forename type="first">Pierre</forename>
                    <surname>Ranson</surname>
                  </persName>
                  <idno type="halauthorid">132925-0</idno>
                  <affiliation ref="#struct-955"/>
                </author>
              </analytic>
              <monogr>
                <idno type="halJournalId" status="VALID">17081</idno>
                <idno type="issn">0167-9317</idno>
                <idno type="eissn">1873-5568</idno>
                <title level="j">Microelectronic Engineering</title>
                <imprint>
                  <publisher>Elsevier</publisher>
                  <biblScope unit="volume">84</biblScope>
                  <biblScope unit="pp">1128</biblScope>
                  <date type="datePub">2007-01-27</date>
                </imprint>
              </monogr>
              <idno type="doi">10.1016/j.mee.2007.01.048</idno>
            </biblStruct>
          </sourceDesc>
          <profileDesc>
            <langUsage>
              <language ident="en">English</language>
            </langUsage>
            <textClass>
              <classCode scheme="halDomain" n="phys.phys.phys-plasm-ph">Physics [physics]/Physics [physics]/Plasma Physics [physics.plasm-ph]</classCode>
              <classCode scheme="halTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halOldTypology" n="ART">Journal articles</classCode>
              <classCode scheme="halTreeTypology" n="ART">Journal articles</classCode>
            </textClass>
            <abstract xml:lang="en">
              <p>The growth and destruction of the SiOxFy passivation layer is investigated in the so-called cryogenic process used for silicon etching. We show that etching products (SiF4) can play an important role in its formation. It can explain why overpassivating regime characterized by the appearance of black silicon is preferentially obtained in large structures. Test experiments clearly show that both SiFx and O radicals are necessary to create the passivation layer. By separating SiF4 plasma and O2 plasma, we could conclude that the reaction mainly occurred at the sidewalls of the structure. If we increase the power of the oxygen plasma, the passivation layer can be reinforced. Finally, we grew the passivation layer on a flat surface by using a system of electrostatic grids to get rid of ions and electrons in order to enhance the deposition on the surface. Ellipsometric analysis is reported during the growth of the passivation layer and its destruction, which occurs when the wafer is warmed back up to ambient temperature.</p>
            </abstract>
          </profileDesc>
        </biblFull>
      </listBibl>
    </body>
    <back>
      <listOrg type="structures">
        <org type="laboratory" xml:id="struct-955" status="OLD">
          <idno type="IdRef">195134257</idno>
          <idno type="RNSR">199612379C</idno>
          <orgName>Groupe de recherches sur l'énergétique des milieux ionisés</orgName>
          <orgName type="acronym">GREMI</orgName>
          <date type="start">1996-01-01</date>
          <date type="end">2011-12-31</date>
          <desc>
            <address>
              <addrLine>14 Rue d'Issoudun - BP 6744 45067 ORLEANS CEDEX 2</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-orleans.fr/gremi/</ref>
          </desc>
          <listRelation>
            <relation name="UMR 6606" active="#struct-300297" type="direct"/>
            <relation name="UMR6606" active="#struct-441569" type="direct"/>
          </listRelation>
        </org>
        <org type="institution" xml:id="struct-23639" status="VALID">
          <orgName>STMicroelectronics [Crolles]</orgName>
          <orgName type="acronym">ST-CROLLES</orgName>
          <desc>
            <address>
              <addrLine>850 rue Jean Monnet BP 16 38926 Crolles</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.st.com</ref>
          </desc>
        </org>
        <org type="institution" xml:id="struct-300297" status="VALID">
          <idno type="IdRef">026402971</idno>
          <idno type="ISNI">0000 0001 2158 1666</idno>
          <idno type="ROR">https://ror.org/014zrew76</idno>
          <orgName>Université d'Orléans</orgName>
          <orgName type="acronym">UO</orgName>
          <desc>
            <address>
              <addrLine>Château de la Source - Avenue du Parc Floral - BP 6749 - 45067 Orléans cedex 2</addrLine>
              <country key="FR"/>
            </address>
            <ref type="url">http://www.univ-orleans.fr/</ref>
          </desc>
        </org>
        <org type="regroupinstitution" xml:id="struct-441569" status="VALID">
          <idno type="IdRef">02636817X</idno>
          <idno type="ISNI">0000000122597504</idno>
          <idno type="ROR">https://ror.org/02feahw73</idno>
          <orgName>Centre National de la Recherche Scientifique</orgName>
          <orgName type="acronym">CNRS</orgName>
          <date type="start">1939-10-19</date>
          <desc>
            <address>
              <country key="FR"/>
            </address>
            <ref type="url">https://www.cnrs.fr/</ref>
          </desc>
        </org>
      </listOrg>
    </back>
  </text>
</TEI>