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Article Dans Une Revue Materials Science and Engineering: C Année : 2008

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

M. Gassoumi
  • Fonction : Auteur
J.M. Bluet
G. Guillot
H. Maaref
  • Fonction : Auteur

Dates et versions

hal-00357801 , version 1 (02-02-2009)

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M. Gassoumi, J.M. Bluet, G. Guillot, Christophe Gaquière, H. Maaref. Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy. Materials Science and Engineering: C, 2008, 28, pp.787-790. ⟨10.1016/j.msec.2007.10.068⟩. ⟨hal-00357801⟩
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