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Article Dans Une Revue International Journal of RF and Microwave Computer-Aided Engineering Année : 2008

Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach

Résumé

A new empirical nonlinear model of GaN-based electron devices is presented in the article. The model takes into account low-frequency dispersion due to self-heating and charge-trapping phenomena and provides accurate predictions at frequencies where nonquasi-static effects are important. The model is based on the application of a recently proposed equivalent-voltage approach and is identified by using pulsed measurements of drain current characteristics and pulsed S-parameter sets. Full experimental validation on a GaN on SiC PHEMT is provided at both small- and large-signal operating conditions

Dates et versions

hal-00357800 , version 1 (02-02-2009)

Identifiants

Citer

Alberto Santarelli, Valeria Di Giacomo, Antonio Raffo, Fabio Filicori, Giorgio Vannini, et al.. Nonquasi-static large-signal model of GaN FETs through an equivalent voltage approach. International Journal of RF and Microwave Computer-Aided Engineering, 2008, 18, pp.507-516. ⟨10.1002/mmce.20326⟩. ⟨hal-00357800⟩
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