RF small signal analysis of Schottky-barrier p-MOSFETs
Abstract
This paper presents a detailed RF study for source/drain Schottky-barrier (SB) MOSFETs. Using on-wafer -parameters, high-frequency (HF) figures-of-merit (FoMs) and small-signal equivalent circuits (SSEC) are first extracted and discussed for a -gate-length SB MOSFET. Then, using ac simulations, HF FoM's sensitivity along SB height and underlap length variations are subsequently presented. The whole study provides, for SB MOSFETs, a deep understanding of key ac-element (transconductances and capacitances) behavior as well as process-parameter optimization to achieve the best HF FoMs.
Domains
Engineering Sciences [physics]
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2008-Valentin-TED-RF_Small-Signal_Analysis-SBMOS-hal.pdf (1.44 Mo)
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| Origin | Files produced by the author(s) |
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