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Communication Dans Un Congrès Année : 1993

Periodic and disordered polytypes of SiC: A dynamic model based on local deformations

Résumé

Silicon carbide exists under a great variety of polytypes that can be described by a sequence of orientations of diatomic Si-C layers in a stacking direction. A dynamical model is proposed for the formation of polytypes during the layer-by-layer growth of the material that occurs in CVD/CVI. A recurrence law is determined for the sequence of layer deformations ; the orientation sequence is derived from it. The evolution of this law allows one to reproduce qualitatively the whole polytypism of SiC: short- or long- period periodic polytypes, as well as one-dimensionally disordered polytypes. A two-parameter bifurcation diagram has been studied : its fractal structure allows one to visualize various types of ''roads to chaos".

Domaines

Matériaux
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Dates et versions

hal-00331692 , version 1 (17-10-2008)

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  • HAL Id : hal-00331692 , version 1

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Gerard L. Vignoles, Roger Naslain. Periodic and disordered polytypes of SiC: A dynamic model based on local deformations. High-Temperature Ceramic-Matrix Composites (HT-CMC), Sep 1993, Bordeaux, France. pp.249-258. ⟨hal-00331692⟩

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