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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2004

From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction

T. Taliercio
R. Intartaglia
  • Function : Author
B. Gil
P. Lefèbvre
U. Tisch
  • Function : Author
E. Finkman
  • Function : Author
J. Salzman
  • Function : Author
M.-A. Pinault
M. Laügt
  • Function : Author

Abstract

The composition dependence of the band-gap reduction of GaAs1-xNx grown by molecular beam epitaxy and metal organic vapor phase epitaxy was investigated using transmission, reflection, and low-temperature photoluminescence (PL) spectroscopy for N incorporations ranging from doping concentrations up to x=5 × 10-2. We identified four different regimes of N incorporation with distinctly different band-gap scaling. N-doped GaAs shows sharp PL lines due to N cluster states, but no significant change in the band gap. In the ultradilute region (10-5≤x≤ 1.5 × 10-3) a strong band-gap reduction was observed which scales according to x, irrespective of the local distribution of N atoms in the As sublattice. The same band-gap scaling was observed for ultradilute InGaAsN after corrections for strain and In alloying. In an intermediate compositional region (1.5 × 10-3≤x≤2.5×10-2) ΔEg scales according to x2/3. At higher concentrations (x>2.5 × 10-2) ΔEg weakens due to effects connected with N oversaturation of the As sublattice.

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Electronics
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Dates and versions

hal-00330627 , version 1 (15-10-2008)

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T. Taliercio, R. Intartaglia, B. Gil, P. Lefèbvre, T. Bretagnon, et al.. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (7), pp.073303.1-073303.4. ⟨10.1103/PhysRevB.69.073303⟩. ⟨hal-00330627⟩
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