Sb-based VCSEL operating at 2.3 µm in continuous wave regime up to 350 K with a TEM00 beam - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Journal de Physique IV Proceedings Année : 2004

Sb-based VCSEL operating at 2.3 µm in continuous wave regime up to 350 K with a TEM00 beam

Résumé

we report on the growth by MBE and characterization of a laser diode pumped Vertical Cavity Surface Emitting Laser, where the optical cavity is formed by the Bragg mirror, an air gap and a dielectric concave mirror. The laser operates at 2.43 $\mu$m in continuous wave regime up to 350K

Domaines

Electronique

Dates et versions

hal-00327773 , version 1 (09-10-2008)

Identifiants

Citer

L. Cerutti, A. Garnache, A. Ouvrard, F. Genty. Sb-based VCSEL operating at 2.3 µm in continuous wave regime up to 350 K with a TEM00 beam. Journal de Physique IV Proceedings, 2004, 119, pp.147-148. ⟨10.1051/jp4:2004119030⟩. ⟨hal-00327773⟩
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