Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation - Archive ouverte HAL
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2004

Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation

Résumé

Silicon on insulator static random-access memory cell sensitivity to single event upset is studied. Currents and sensitive regions are then considered. Because of the buried oxide, the main part of these results appears to be different to that for bulk technologies.

Domaines

Electronique

Nadia Doudou  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-00327728

Soumis le : jeudi 9 octobre 2008-12:42:09

Dernière modification le : mardi 23 janvier 2024-12:28:53

Fichier non déposé

Dates et versions

hal-00327728 , version 1 (09-10-2008)

Identifiants

Citer

K. Castellani-Coulié, B. Sagnes, Frédéric Saigné, J.-M. Palau, M.-C. Calvet, et al.. Study of an SOI SRAM sensitivity to SEU by 3-D device Simulation. IEEE Transactions on Nuclear Science, 2004, 51 (5), pp.2799 - 2804. ⟨10.1109/TNS.2004.835076⟩. ⟨hal-00327728⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS IES UNIV-MONTPELLIER CEM2
35 Consultations
0 Téléchargements

Altmetric

Partager

More