Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys - Archive ouverte HAL Access content directly
Journal Articles Applied Physics Letters Year : 2003

Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys

O. Pagès
  • Function : Author
  • PersonId : 1074794
T. Tite
  • Function : Author
O. Maksimov
  • Function : Author
M.C. Tamargo
  • Function : Author

Abstract

The number of N atoms in N-rich regions mostly due to nonrandom N incorporation in GaAsN (N∼4%), referred to as the Nr rate, is studied using a nonstandard Raman setup that addresses transverse symmetry. The Ga-N opticalrange shows a two-mode signal which discriminates between the N-poor ( Np ) and N-rich (Nr) regions. This is discussed via a percolation-based picture for Be-chalcogenide alloys, which exhibit mechanical contrast with regard to the shear modulus. This applies to GaAs-GaN even though the contrast is in the bulk modulus. The balance of Nr/Np strength provides a Nr rate of ∼30%, i.e., much larger than the corresponding Be rate of ∼4% in random Be-based alloys.

Domains

Electronics

Dates and versions

hal-00327726 , version 1 (09-10-2008)

Identifiers

Cite

O. Pagès, T. Tite, D. Bormann, E. Tournié, O. Maksimov, et al.. Percolation-based vibrational picture to estimate nonrandom N substitution in GaAsN alloys. Applied Physics Letters, 2003, 82 (17), pp.2808-2810. ⟨10.1063/1.1566801⟩. ⟨hal-00327726⟩
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