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Article Dans Une Revue Electronics Letters Année : 2003

Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm

Résumé

The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical external cavity surface emitting laser (VECSEL) emitting near 2.1 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM00 low-divergence laser operation is demonstrated in quasi-CW (10 μs pulses, 10% duty cycle) from 250 up to 350 K. A threshold as low as 390 W/cm2 at 250 K combined with a T0 around 33 K has been measured.

Domaines

Electronique
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Dates et versions

hal-00327486 , version 1 (08-10-2008)

Identifiants

Citer

L. Cerutti, A. Garnache, F. Genty, C. Alibert. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm. Electronics Letters, 2003, 39 (3), pp.290 - 292. ⟨10.1049/el:20030192⟩. ⟨hal-00327486⟩
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