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Article Dans Une Revue physica status solidi (c) Année : 2007

Investigations on InSb-based quantum dots grown by molecular beam epitaxy

Résumé

InSb quantum dots (QDs) have been grown by molecular-beam epitaxy (MBE) on GaSb substrates. Typical MBE growth conditions lead to a low density (109 cm-2) of large islands which are dislocated. Insertion of a thin InAs nucleation layer increases the QDs density by one order of magnitude which is interpreted in terms of differing In-to-group-V binding energies. Finally, we show that a high density (7 x 1010 cm-2) of small coherent QDs can be grown by using a two-steps procedure. Photoluminescence near 3.5 µm is demonstrated.

Domaines

Electronique

Dates et versions

hal-00327182 , version 1 (07-10-2008)

Identifiants

Citer

N. Deguffroy, V. Tasco, A. N. Baranov, B. Satpati, A. Trampert, et al.. Investigations on InSb-based quantum dots grown by molecular beam epitaxy. physica status solidi (c), 2007, 4 (5), pp.1743-1746. ⟨10.1002/pssc.200674268⟩. ⟨hal-00327182⟩
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