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Communication Dans Un Congrès Année : 2008

A 60GHz, 13 dBm fully integrated 65nm RF-CMOS power amplifier

Résumé

A 65nm CMOS, 60GHz fully integrated power amplifier (PA) from STMicroelectronics has been designed for low cost Wireless Personal Area Network (WPAN). It has been optimized to deliver the maximum linear output power (OCP1) without using parallel amplification topology. The simulated OCP1 is equal to 8.9 dBm with a gain of 8dB. To obtain good performances and consume an ultra compact area of silicon, the PA has been matched and optimized with a mixed technique, using lumped and distributed elements. The chip size is 0.48mm*0.6mm including pads
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Dates et versions

hal-00326845 , version 1 (06-10-2008)

Identifiants

  • HAL Id : hal-00326845 , version 1

Citer

Sofiane Aloui, Eric Kerherve, Robert Plana, Didier Belot. A 60GHz, 13 dBm fully integrated 65nm RF-CMOS power amplifier. Circuits and Systems and TAISA Conference, 2008. NEWCAS-TAISA 2008, Jun 2008, Montreal, France. pp.237-240. ⟨hal-00326845⟩
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