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Article Dans Une Revue Journal of Applied Physics Année : 2008

Investigation of strain relaxation mechanisms and transport properties in epitaxial SmNiO3 films

Résumé

This article deals with strain relaxation in SmNiO3 epitaxial films deposited by chemical vapor deposition on SrTiO3 substrates. Thanks to x-ray reciprocal space mapping, we demonstrate that the strain relaxation is driven both “chemically” and “mechanically” by the formation of oxygen vacancies and misfit dislocations, respectively. Besides, a careful interpretation of the resistivity measurements allows us to highlight a correlation between the formation of oxygen vacancies, the stabilization of Ni3+, and the metal-insulator transition in the SmNiO3 films. Furthermore, using coplanar and grazing incidence diffraction, the shape of the strain gradient within the films is retrieved. This latter is calculated using a versatile scattering model involving B-spline functions. Finally, particular planar faults Ruddlesden–Popper faults that give rise to extended diffuse scattering on transverse scans are analyzed using a recent phenomenological model
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Dates et versions

hal-00292553 , version 1 (01-07-2008)

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Florine Conchon, Alexandre Boulle, René Guinebretière, Eric Dooryhee, Jean-Louis Hodeau, et al.. Investigation of strain relaxation mechanisms and transport properties in epitaxial SmNiO3 films. Journal of Applied Physics, 2008, 103, pp.123501-1-123501-8. ⟨10.1063/1.2938845⟩. ⟨hal-00292553⟩
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