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Article Dans Une Revue Journal of Crystal Growth Année : 2007

MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications

Dmitri Yarekha
S. Godey
X. Wallart
H. Colder
  • Fonction : Auteur
M. Zaknoune

Dates et versions

hal-00285630 , version 1 (06-06-2008)

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Dmitri Yarekha, S. Godey, X. Wallart, H. Colder, M. Zaknoune, et al.. MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications. Journal of Crystal Growth, 2007, 301-302, pp.217-220. ⟨10.1016/j.jcrysgro.2006.11.235⟩. ⟨hal-00285630⟩
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