Article Dans Une Revue Ferroelectrics Année : 2007

Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters

Résumé

BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the existence of a Debye relaxation mode is postulated. Varactors made with these BST films show a decrease of their capacitance by a factor of about 1.7 under 40 volts of bias. Phaseshifters have been realized with these varactors: a bias of 40 volts at 30 GHz permits to obtain a phaseshift of 360 degrees.

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Dates et versions

hal-00285626 , version 1 (06-06-2008)

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Citer

Gabriel Vélu, Gregory Houzet, Ludovic Burgnies, Jean-Claude Carru, Aurélien Marteau, et al.. Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters. Ferroelectrics, 2007, 353 (1), pp.29-37. ⟨10.1080/00150190701367036⟩. ⟨hal-00285626⟩
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