AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication - Archive ouverte HAL Access content directly
Conference Papers Year : 2007

AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication

S. Boulay
  • Function : Author
S. Touati
  • Function : Author
A. Sar
  • Function : Author
Virginie Hoel
Christophe Gaquière
S. Joblot
  • Function : Author
Y. Cordier
F. Semond
  • Function : Author
J. Massies
  • Function : Author
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Dates and versions

hal-00284403 , version 1 (03-06-2008)

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S. Boulay, S. Touati, A. Sar, Virginie Hoel, Christophe Gaquière, et al.. AlGaN/GaN HEMTs on (001) oriented silicon substrate based on 100nm SiN recessed gate technology for low cost device fabrication. 2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.96-99, ⟨10.1109/EMICC.2007.4412656⟩. ⟨hal-00284403⟩
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