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Communication Dans Un Congrès Année : 2007

Optical switch using InP optical wire technology

Résumé

We report on a new type of optical switch based on submicron structures and present the results obtained on the first nanophotonics based optical switch. First, we present results obtained on passive components that are required in an optical switch or switching matrix: straight waveguides, bend waveguides and Y junctions. Measured propagation loss are lower than 1dB/mm for waveguides wider than 1&mgr;m. Excess bending loss is 1dB for curvature radius as small as 30&mgr;m. Loss due to branching angle in a Y junction is 2dB for angle as wide as 20°. Optical switch design is based on two dissymmetric DOS like active junctions; theoretical crosstalk is 28dB, 14dB for each junction. We present the technological process to realize this active component. Finally, we report on the first characterization of a single Y junction a crosstalk of 11dB.
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Dates et versions

hal-00284394 , version 1 (03-06-2008)

Identifiants

Citer

Marie Lesecq, Maxime Beaugeois, Sophie Maricot, Christophe Boyaval, Christiane Legrand, et al.. Optical switch using InP optical wire technology. Photonic Materials, Devices and Applications II, May 2007, Maspalomas, Spain. pp.659305-1-11, ⟨10.1117/12.721659⟩. ⟨hal-00284394⟩
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