Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density - Archive ouverte HAL Access content directly
Conference Papers Year : 2007

Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density

Dmitri Yarekha
Jean-Francois Lampin
M. Zaknoune
S. Godey
F. Mollot
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hal-00284099 , version 1 (02-06-2008)

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D. Vignaud, Dmitri Yarekha, Jean-Francois Lampin, M. Zaknoune, S. Godey, et al.. Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.586-587, ⟨10.1109/ICIPRM.2007.381257⟩. ⟨hal-00284099⟩
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