Conference Papers
Year : 2007
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https://hal.science/hal-00284099
Submitted on : Monday, June 2, 2008-11:14:55 AM
Last modification on : Friday, March 24, 2023-2:52:50 PM
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D. Vignaud, Dmitri Yarekha, Jean-Francois Lampin, M. Zaknoune, S. Godey, et al.. Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.586-587, ⟨10.1109/ICIPRM.2007.381257⟩. ⟨hal-00284099⟩
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