Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2007

Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density

Dmitri Yarekha
Jean-Francois Lampin
M. Zaknoune
S. Godey
F. Mollot
Fichier non déposé

Dates et versions

hal-00284099 , version 1 (02-06-2008)

Identifiants

Citer

D. Vignaud, Dmitri Yarekha, Jean-Francois Lampin, M. Zaknoune, S. Godey, et al.. Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density. 19th International Conference on Indium Phosphide and Related Materials, IPRM'07, 2007, Japan. pp.586-587, ⟨10.1109/ICIPRM.2007.381257⟩. ⟨hal-00284099⟩
34 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More