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Communication Dans Un Congrès Année : 2007

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

P. Nouvel
F. Teppe
A. Shchepetov
  • Fonction : Auteur
S. Bollaert

Résumé

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion law

Domaines

Electronique
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Dates et versions

hal-00284055 , version 1 (11-07-2022)

Identifiants

Citer

J. Torres, P. Nouvel, Laurent Chusseau, F. Teppe, A. Shchepetov, et al.. Tunable plasma wave resonant detection of optical beating in high electron mobility transistor. European Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, CLEOE/IQEC 2007, 2007, Munich, Germany. ⟨10.1109/CLEOE-IQEC.2007.4386307⟩. ⟨hal-00284055⟩
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