Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement - Archive ouverte HAL
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2007

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Résumé

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with diameter below 10nm, the ionization of the impurities at 300K is strongly reduced and heavy doping is necessary to obtain conductive systems. These results imply that the critical density for metal-nonmetal transitions is not the same as in the bulk. Experiments are proposed to test the predictions.
Fichier principal
Vignette du fichier
PRBDoping.pdf (248.26 Ko) Télécharger le fichier
Origine Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-00283119 , version 1 (06-08-2021)

Identifiants

Citer

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan. Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩
103 Consultations
1067 Téléchargements

Altmetric

Partager

More