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Article Dans Une Revue Thin Solid Films Année : 2001

Densification and crystallization processes of aluminosilicate planar waveguides doped with rare-earth ions

Résumé

Aluminosilicate planar waveguides have been prepared using a sol–gel process and the dip-coating technique. The structure of Er3+- and Ce3+-doped as well as undoped films has been investigated as a function of the annealing temperature. Low-wavenumber Raman scattering and opto-geometrical properties of these thin films have demonstrated the role of Er3+ and Ce3+ ions in the densification and nucleation processes. Indeed, doping with rare-earth ions first hinders the densification process in the amorphous phase, while crystallization begins at a lower annealing temperature for the doped waveguides. It was found that the two behaviors are intimately linked to the doping effect.

Dates et versions

hal-00279871 , version 1 (15-05-2008)

Identifiants

Citer

Jean-Marie Nedelec, B. Capoen, S. Turrell, M. Bouazaoui. Densification and crystallization processes of aluminosilicate planar waveguides doped with rare-earth ions. Thin Solid Films, 2001, 382, pp.81-85. ⟨10.1016/S0040-6090(00)01696-5⟩. ⟨hal-00279871⟩
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